The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2000
Filed:
Jun. 17, 1997
Mitsugu Wada, Kanagawa-ken, JP;
Toshiaki Fukunaga, Kanagawa-ken, JP;
Fuji Photo Film Co., Ltd., Kanagawa-ken, JP;
Abstract
A III-V group semiconductor laser includes a first clad layer, a first optical waveguide layer, a first barrier layer, an active layer, a second barrier layer, a second optical waveguide layer and a second clad layer formed in this order on a GaAs substrate which is a III-V group compound semiconductor. Each of the first and second clad layers and the first and second optical waveguide layers is of a composition which matches with the GaAs substrate in lattice. The active layer is of a composition which induces compressive strain on the GaAs substrate. Each of the first and second barrier layers is of a composition which induces tensile strain on the GaAs substrate, thereby compensating for the compressive strain induced in the active layer. The ratio of V group elements contained in the first optical waveguide layer is the same as that in the first barrier layer, and the ratio of V group elements contained in the second optical waveguide layer is the same as that in the second barrier layer.