The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2000
Filed:
Oct. 01, 1997
Katsumi Nishikawa, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
To operate a dynamic random access memory (DRAM) system faster and to make the DRAM system smaller, a DRAM system includes a DRAM cell array having a first bit line connected to a DRAM cell, wherein the DRAM cell stores a first voltage which is less than a second voltage, and a sense amplifier portion having a second bit line and for amplifying data of the second bit line to the first voltage. The sense amplifier portion connects electrically the first bit line and the second bit line, supplies a third voltage which is greater than the second voltage to the second bit line when the first bit line and the second bit line are connected electrically, and stops supplying the third voltage before a voltage of the second bit line reaches the first voltage.