The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2000
Filed:
Sep. 29, 1997
Applicant:
Inventors:
Yuji Kakuta, Tokyo, JP;
Yasuhiro Shirakawa, Tokyo, JP;
Yoshiaki Fukasawa, Tokyo, JP;
Yoshiaki Wakabayashi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F / ; H03F / ;
U.S. Cl.
CPC ...
330311 ; 330 99 ; 330100 ;
Abstract
A plurality of field effect transistors (FET's) (11, 12) are coupled in cascode connection. A drain of the final-stage FET (12) is coupled to a gate of the first-stage FET (11) through a first negative-feedback circuit (13). A drain of the first-stage FET (11) is coupled to the gate of the first-stage FET (11) through a second negative-feedback circuit (14). The first negative-feedback circuit (13) is connected to a first resistor (Rf1) while the second negative-feedback circuit (14) is connected to a second resistor (Rf2).