The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2000

Filed:

Dec. 10, 1997
Applicant:
Inventors:

Yoshiyuki Ono, Minami-Ashigara, JP;

Akira Imai, Minami-Ashigara, JP;

Hidekazu Hirose, Minami-Ashigara, JP;

Katsuhiro Sato, Minami-Ashigara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
136263 ; 136261 ; 136265 ; 136253 ; 136252 ; 136260 ; 136262 ; 136257 ; 257 40 ; 257 43 ; 257431 ; 429111 ; 429209 ; 429212 ; 429213 ; 429218 ; 429222 ; 429231 ;
Abstract

The photo-semiconducting electrode of the present invention comprises a semiconducting substrate, a chemically adsorbed film formed thereon composed of at least one compound selected from the compounds represented by the formulas: formulas (I) R.sup.1 M.sup.1 Y.sub.1.sub.3, (II) R.sup.1 R.sup.2 M.sup.1 Y.sup.1.sub.2, (III) R.sup.1 R.sup.2 R.sup.3 M.sup.1 Y.sup.1 and (IV) R.sup.1 --SH, respectively, and a dye which is fixed to the surface of the chemically adsorbed film and has a functional group capable of reacting with a halogen atom. Because of this, the photo-semiconductor electrode of the present invention is capable of efficiently absorbing solar light and performing energy conversion and superior in photoelectric conversion efficiency, stability and durability. In addition, it can be easily produced.


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