The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2000

Filed:

Mar. 29, 1999
Applicant:
Inventors:

Zhihai Wang, Sunnyvale, CA (US);

Wilbur G Catabay, Saratoga, CA (US);

Joe W Zhao, San Jose, CA (US);

Assignee:

LSI Logic Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438789 ; 438471 ; 438475 ; 438787 ; 438790 ; 257607 ; 257629 ;
Abstract

A process is described for treating damaged surfaces of a low dielectric constant organo silicon oxide insulation layer of an integrated circuit structure to inhibit absorption of moisture which comprises treating such damaged surfaces of said organo silicon oxide insulation layer with a hydrogen plasma. The treatment with hydrogen plasma causes hydrogen to bond to silicon atoms with dangling bonds in the damaged surface of the organo silicon oxide layer to replace organic material severed from such silicon atoms at the damaged surface, whereby absorption of moisture in the damaged surface of the organo silicon oxide layer, by bonding of such silicon dangling bonds with moisture, is inhibited.


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