The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2000
Filed:
Jan. 30, 1998
Applicant:
Inventor:
Katsuyoshi Andoh, Tokyo, JP;
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03C / ;
U.S. Cl.
CPC ...
430396 ; 430311 ; 430322 ; 355 53 ; 355 67 ; 355 71 ;
Abstract
A method is provided for accurate patterning of photoresist during lithography process. A photoresist layer is deposited on a surface of a semicondictor wafer. The photoresist layer is then illuminated using a lithography apparatus including a mask, a two-thirds annular aperture stop and a quadra pole aperture stop. Portions of the photoresist layer are removed to provide a resulting patterned photoresist layer.