The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2000
Filed:
Dec. 10, 1998
Shohei Suzuki, Tokyo, JP;
Nikon Corporation, Tokyo, JP;
Abstract
Charged-particle-beam transfer-exposure apparatus are disclosed exhibiting reduced hybrid distortion. A charged particle beam passes through a mask and through a projection-lens assembly to form an image of a selected mask region on a wafer. Signals corresponding to the functions d.sub.x1 (X.sub.w, Y.sub.w, Z, I, s), d.sub.y1 (X.sub.w, Y.sub.w, Z, I, s), d.sub.x2 (X.sub.w, Y.sub.w, Z, I, s), d.sub.y2 (X.sub.w, Y.sub.w, Z, I, s), . . . , are generated by a computer and routed to respective deflectors to minimize deflection aberrations, wherein X.sub.w, Y.sub.w are the coordinates of the deflected transfer region on the wafer, Z is the wafer height, I is the beam current passing through the pattern area in a mask region, and s is a variable pertaining to scattering of charged particles in the pattern. The signals routed to the various deflectors also take into account the function g(X.sub.w, Y.sub.w, Z, I, s) which corrects deflection distortion.