The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2000

Filed:

Jul. 30, 1997
Applicant:
Inventors:

N Johan Knall, Sunnyvale, CA (US);

Duane A Haven, Umpqua, OR (US);

Roger W Barton, Palo Alto, CA (US);

William H Creel, San Jose, CA (US);

Christopher J Spindt, Menlo Park, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C25F / ;
U.S. Cl.
CPC ...
205640 ;
Abstract

Excess emitter material (52B) is removed in multiple steps during the fabrication of an electron-emitting device. A structure is initially provided in which a dielectric layer (44) overlies a non-insulating region (42), control electrodes (80 or 46/80) overlie the dielectric layer, openings (48/50) extend through the control electrodes and dielectric layer, electron-emissive elements (52A) formed with emitter material are situated in the openings, and an excess layer (52B) of the emitter material overlies the control electrodes and the dielectric layer. Portions of the excess emitter material overlying the dielectric layer in the spaces between the control electrodes are initially removed, preferably with etchant that directly attacks the emitter material. Portions (52C) of the excess emitter material overlying the control electrodes above the electron-emissive elements are subsequently removed to expose the electron-emissive elements.


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