The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2000
Filed:
Nov. 18, 1997
Applicant:
Inventors:
Christopher Harris, Sollentuna, SE;
Erik Danielsson, Bromma, SE;
Assignee:
ABB Research Ltd., Zurich, CH;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 77 ; 257289 ; 257410 ; 257411 ; 257751 ; 257764 ; 257770 ;
Abstract
A semiconductor device comprises at least one semiconductor layer of SiC and a layer of a refractory metal nitride separated by an insulating layer located next to the SiC layer of SiO.sub.2. The insulating layer comprises two sub layers, namely a first sub layer of SiO.sub.2 next to the SiC layer and a second sub layer of Si.sub.3 N.sub.4 located between the first sub layer and the metal nitride layer.