The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2000
Filed:
Aug. 05, 1996
Applicant:
Inventor:
Yoo Chan Jeon, Seoul, KR;
Assignee:
LG Semicon Co., Ltd., Chungcheongbuk-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438608 ; 438622 ; 438660 ; 438663 ; 438661 ;
Abstract
A process for preparing a semiconductor device using a dielectric thin film includes the steps of forming a first electrode on a base plate; forming a dielectric film on the first electrode, the dielectric film including a Perovskite structure oxide; forming a second electrode on the dielectric film; and annealing the first and second electrodes so that metal components of the first and second electrodes are oxidized and diffused into a crystal system of the dielectric film.
Jeon, Yoo. (2000). Method for preparing dielectric thin film and semiconductor device using (U.S. Patent No. 6025257). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6025257
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile