The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2000
Filed:
Feb. 18, 1998
Applicant:
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438268 ; 438275 ; 438286 ; 438289 ;
Abstract
A method for fabricating a self-aligned DMOS transistor is provided. The method includes forming a passivation layer (18, 68) on an oxide layer (16, 66) of a substrate (12, 56). The oxide layer (16, 66) is then removed from the surface of the substrate (12, 56) where it is exposed through the passivation layer (18, 68). A reduced surface field region (36, 74) is then formed where the surface of the substrate (12, 56) is exposed through the passivation layer (18, 68). An oxide layer (38, 80) is then formed on the reduced surface field region (36, 74).