The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2000

Filed:

Apr. 25, 1995
Applicant:
Inventors:

Toshiyuki Komatsu, Hiratsuka, JP;

Yasue Sato, Kawasaki, JP;

Shin-Ichi Kawate, Machida, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430313 ; 430330 ; 430396 ;
Abstract

A processing method for etching a substrate is described. This method includes subjecting a surface of a substrate to be processed to selective irradiation with a light in a gas atmosphere to form a surface-modified layer. The substrate surface with the surface-modified layer is then annealed to stabilize and make the surface-modified layer more etch resistant. Both the stabilized surface-modified layer and a non-modified portion of the substrate are then subjected to dry etching, thereby utilizing the higher resistance to dry etching of the stabilized surface-modified layer compared to the non-modified portion to selectively etch the non-modified portion to a desired depth.


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