The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2000
Filed:
Mar. 10, 1997
Richard L Sampson, Bridgeport, CT (US);
Allison H Sampson, Bridgeport, CT (US);
Halox Technologies Corporation, Bridgeport, CT (US);
Abstract
Ion exchange materials, as particulate and membranes, are modified by permanently attaching counter ions to a portion of the ion exchange sites. The permanent attachment of the counter ions forms semiconductor junctions which act as mini anodes, or cathodes, to significantly increase the ability to oxidize or reduce a species to be treated, or split water, in an electrolytic reactor. The non-converted transfer sites in the ion exchange material also significantly increase the mobility of the ionic species in the electrolyte. The ion exchange material may be a monobed of either modified anion exchange material or modified cation exchange material, or a suitable mixed bed of both, depending upon the application. When the anode is in direct contact with a modified cation exchange material and under the influence of direct current, free radical hydroxyl and regenerant hydrogen are formed. When the cathode is in direct contact with a modified anion exchange material and under the influence of direct current, free radical hydrogen and regenerant hydroxyl are formed. Alternatively, the modified ion exchange material can be separated from both the anode and the cathode, and regenerant hydrogen and hydroxyl are produced at the semiconductor junctions.