The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2000
Filed:
May. 23, 1997
Peter L Madaffari, Camden, ME (US);
Tibbetts Industries, Inc., Camden, ME (US);
Abstract
A JFET preamplifier for use with a high impedance transducer, having an inherently capacitive input bias impedance. The capacitance of the input bias impedance is effectively neutralized by capacitively coupling the JFET gate bias circuit to the source electrode of the JFET. The JFET preamplifier is configured as a source follower which reduces any capacitance between the JFET gate and source electrode by the open loop gain of the amplifier. By capacitively coupling the JFET gate bias circuit capacitance to the JFET source electrode, the overall input capacitance of the preamplifier stage is reduced.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile