The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 08, 2000

Filed:

Mar. 31, 1998
Applicant:
Inventor:

Hiroshi Hirabayashi, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257659 ; 257288 ; 257660 ;
Abstract

There is disclosed a semiconductor device which is at least partially provided with an element having one-conductive type layers 7 and 9 being conductive in reverse to an oppsite conductive type semiconductor substrate 1. At the same time when the one-conductive type layers are formed, the one-conductive type layers 7' and 9' are formed in a region in which a signal input/output pad 14 is formed. Additionally, contact holes 11' are made in peripheral positions of the one-conductive type layers 7' and 9' in an interlayer insulating film 10 which is formed on a surface of the semiconductor substrate 1. In a region surrounded by the contact holes 11, on a surface of the interlayer insulating film 10, the signal input/output pad 14 is formed. Simultaneously with formation of the signal input/output pad 14, in a peripheral position of the signal input/output pad 14 formed is a noise shielding electrode 15 which is electrically connected to the contact holes 11.


Find Patent Forward Citations

Loading…