The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2000
Filed:
Jul. 02, 1996
Hikaru Hida, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A compound semiconductor memory has a second semiconductor layer (undoped AlGaAs hetero-barrier layer), a third semiconductor layer (n type InGaAs layer), a fourth semiconductor layer (undoped AlGaAs layer) and a gate electrode of WSi selectively deposited in order on an n type first semiconductor layer (n type GaAs channel layer). A drain electrode and a source electrode, which are electrically connected to the first semiconductor layer are formed on those areas of the first semiconductor layer where the second semiconductor layer or the like is not formed. At this time, the potential barrier of a floating gate (third semiconductor layer) on the gate electrode side is set higher than the potential barrier of the floating gate (first semiconductor layer) on the channel layer side.