The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2000
Filed:
Dec. 22, 1995
Yong-jae Lee, Seoul, KR;
Soo-cheol Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A multilevel interconnection between a polycide layer and a polysilicon layer and a method of forming thereof are provided. The multilevel interconnection comprises: a first impurity-containing conductive layer formed on a semiconductor substrate; a first silicide layer, having a first region thinner than a second region, formed on the first impurity-containing conductive layer; an interlayer dielectric layer formed in other than the first region; a contact hole for exposing the first silicide layer of the first region; and a second impurity-containing conductive layer connected to the first silicide layer through the contact hole. Therefore, increases in contact resistance between conductive layers can be prevented.