The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2000
Filed:
May. 13, 1998
Takao Wada, Hitachinaka, JP;
Yuzo Ishibashi, Ibaraki-ken, JP;
Shigeru Ishii, Aichi-ken, JP;
Yoshikatsu Kuroda, Aichi-ken, JP;
Doryokuro Kakunenryo Kaihatsu Jigyodan, Tokyo, JP;
Mitsubishi Heavy Industries, Ltd., Tokyo, JP;
Abstract
The present invention intends to provide a radioactive rays detection semiconductor device comprises a substrate, an insulating layer formed on the substrate, p-type Si films formed on the insulating layer and equal in resistance value change rates due to temperature change and different in thickness so as to differ in the changes of the resistance values corresponding to the change of the total dose of the radioactive rays, an insulating film covering the p-type Si films, electrodes deposited in contact holes which are formed in the insulating film to reach both end of the p-type Si films, and Al wiring connecting the electrodes close to each other.