The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2000

Filed:

Mar. 31, 1998
Applicant:
Inventors:

Subhas Bothra, San Jose, CA (US);

Paul R Findley, Cupertino, CA (US);

Assignee:

VLSI Technology, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257381 ; 257207 ; 257208 ; 257532 ;
Abstract

Disclosed is a network of on-chip capacitive structures for suppressing power supply inductive noise, methods for making, and systems for designing the on-chip capacitive structures. The network includes a plurality of dummy active regions that are dispersed throughout an integrated circuit design that has a plurality of active regions. The plurality of dummy active regions are separated from the plurality of active regions by at least a bloat distance. The network further includes a network of dummy polysilicon lines that are configured to overlie selected dummy active regions. The network of dummy polysilcon lines that overlie the selected dummy active regions function as dummy gates. In this embodiment, the selected dummy active regions and the dummy polysilicon lines that overlie the selected dummy active regions form the network of on-chip capacitive structures.


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