The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2000
Filed:
Jan. 27, 1998
Atsushi Kamashita, Kawasaki, JP;
Nikon Corporation, Tokyo, JP;
Abstract
Junction-type field-effect transistors are disclosed exhibiting improved resistance to impact ionization. A p-type gate region is formed above an n-type channel region between an n-type drain region and an n-type source region each having a high impurity concentration. The impurity concentration in the vicinity of a point on a boundary between the channel region and the drain region is higher than the impurity concentration in the vicinity of a point on a boundary between the channel region and the source region. The impurity concentration in the channel region can increase essentially linearly or stepwise from the source region to the drain region. The pinch-off point is shifted toward the source side, and the electric field intensity in the boundary region between the channel region and the drain region is relatively low to inhibit impact ionization.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile