The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2000
Filed:
Nov. 13, 1998
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor light-emitting device longer in life time and higher in reliability is provided which is formed of, on a substrate (1), a first conductivity type cladding layer (3) and a second conductivity type cladding layer (7) made of Zn.sub.x Mg.sub.Y Be.sub.1-x-y S.sub.Z Se.sub.1-z (0<x<1,0<y<1,0.ltoreq.z<1) system compound semiconductor, at least one active layer (5) made of Zn.sub.A Cd.sub.B Be.sub.1-A-B S.sub.c Se.sub.1-C (0<A.ltoreq.1, 0.ltoreq.B<1, 0.ltoreq.C<1), having a compressive distortion relative to the above substrate and located between the first and second conductivity type cladding layers, and at least one strain compensation layer having a tensile distortion relative to the above substrate and made of Zn.sub.u Cd.sub.1-u S.sub.v Se.sub.1-v (0<u.ltoreq.1, 0.ltoreq.v<1).