The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2000
Filed:
Mar. 28, 1997
Applicant:
Inventors:
Dietmar Seyferth, Lexington, MA (US);
Toshiya Sugimoto, Osaka, JP;
Pawel Czubarow, Menlo Park, CA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C08G / ;
U.S. Cl.
CPC ...
528 10 ; 528 14 ; 556430 ; 522148 ;
Abstract
A process is provided that involves reductive coupling of polysilane precursors to form polysilane in the presence of ultrasonification. The resulting precursors, upon pyrolysis, lead to improved SiC ceramic product. Ultrasonification can be used to produce oligosilanes from precursors thereof, or polysilanes from monomers, dimers, trimers, or oligomers. Precursors can include Si:C in a ratio of about 1:1, and the invention allows formation of SiC having a Si:C ratio of about 1:1.