The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2000
Filed:
Dec. 11, 1997
Junichi Kinoshita, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
Disclosed are a semiconductor light emitting element whose temperature characteristics are compensated for so as to provide a stable temperature characteristics in a temperature range from -40.degree. C. to +85.degree. C., and an optical fiber transmission system using the same semiconductor light emitting element. In the semiconductor light emitting element, an active layer (2) is buried on an n-type InP semiconductor substrate (1) formed with an n-side electrode (21). The upper layers (4, 5) are covered with an insulating film (22). A p-side electrode (20) is formed on the uppermost layer of the semiconductor substrate so as to cover the insulating film (22). A relatively large metallic resistance element (30) whose resistance increases with increasing temperature is wired on the insulating film (22) as a shunt path, so as to compensate for the temperature characteristics of the semiconductor light emitting element. Therefore, since leakage current is large at a low temperature, the threshold current is high, so that the slope efficiency is small. On the other hand, since leakage current is reduced at a high temperature, a rise in the threshold current and a drop of the slope efficiency can be both compensated for.