The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2000
Filed:
May. 20, 1997
Applicant:
Inventor:
Narihiro Morosawa, Nara, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257347 ; 257350 ; 257354 ;
Abstract
An insulating gate field effect semiconductor device having a gate insulating film of high resistance to moisture adsorption, wherein trap densities in the gate insulator film and at the interface between a channel semiconductor film and the gate insulator film are lowered, and causing no degradation of device characteristics and no lowering of reliability are caused. A SiO.sub.2 film including fluorine atoms is used as the gate insulator film to compensate defects in the gate insulator film and at the interface between the channel semiconductor film and the gate insulator film.