The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2000
Filed:
Dec. 16, 1994
Kazuhito Tsutsumi, Hyogo-ken, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A thin film transistor has a gate electrode formed of polysilicon on a surface of an insulating substrate or an insulating layer. The surface of the gate electrode is covered with a dielectric layer. A polysilicon layer is formed on a surface of the dielectric layer and source/drain regions are formed in this polysilicon layer. The dielectric layer covers the surface of the gate electrode and has its surface made flat. The source/drain regions are formed in the polysilicon layer on the surface of this flat dielectric layer. In another embodiment, a dielectric layer has a 2-layered structure with sidewall insulating layers located on sidewalls of a gate electrode and another insulating layer covering a surface of the gate electrode and surfaces of the sidewall insulating layers. By having larger film thickness of the dielectric layer in the vicinity of a side portion of the gate electrode than that above the gate electrode, the electric field concentration is modified in the vicinity thereof.