The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2000
Filed:
Feb. 05, 1998
Shigeru Tohyama, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
There is provided a solid-state image sensor including a photodetector array in which a plurality of photodetectors are one- or two-dimensionally arranged, each one of the photodetctors including an electrode in a photoelectric conversion region, and transmitting signals when detecting a light passing through the electrode, the solid-state image sensor converting the signals into time sequence electric signals, the electrode being composed of titanium dioxide (TiO.sub.2). The titanium dioxide preferably contains oxygen vacancies or at least one of tungsten (W), phosphorus (P), antimony (Sb), tantalum (Ta), niobium (Nb), indium (In) and oxides thereof (WO.sub.3, P.sub.2 O.sub.5, Sb.sub.2 O.sub.5, Ta.sub.2 O.sub.5, Nb.sub.2 O.sub.5, In.sub.2 O.sub.3). The above-mentioned solid-state image sensor provides a high quantum efficiency which would be obtained when transparent, electrically conductive material such as ITO (In.sub.2 O.sub.3 --SnO.sub.2) and tin oxide (SnO.sub.2) is used. In addition, the solid-state image sensor enhances designability and productivity, since it has no limitation in fabrication which would exist when the above-mentioned transparent, electrically conductive material is used.