The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2000
Filed:
Mar. 29, 1996
Applicant:
Inventors:
Sung Ho Kim, San Jose, CA (US);
David R-Chen Liu, Saratoga, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438720 ; 438729 ; 438742 ; 216 68 ;
Abstract
A method in a plasma processing system having a top electrode and a bottom electrode for etching through a portion of a selected layer of a layer stack of a wafer. The method includes the step of etching at least partially through the selected layer while providing a first radio frequency (RF) signal having a first RF frequency to the top electrode. The method further includes the step of providing a second RF signal having a second RF frequency lower than the first RF frequency to the bottom electrode.