The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2000
Filed:
Jan. 26, 1998
Damon K DeBusk, Orlando, FL (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Abstract
The present invention provides the broad concept of increasing product performance and reliability by causing the ion contaminants to migrate to a region of the semiconductor film and removing that region (containing a concentration of the ion contaminants), thus reducing a total concentration of the ion contaminants in the semiconductor film. Since a concentration of ion contaminants may adversely affect performance and reliability of devices manufactured from semiconductor films having the ion contaminants, the present invention removes the ion contaminants to alleviate performance and reliability problems associated with the presence of the ion contaminants.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile