The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 25, 2000

Filed:

May. 22, 1996
Applicant:
Inventors:

Umesh Sharma, Austin, TX (US);

Shih-Wei Sun, Austin, TX (US);

John R Yeargain, Austin, TX (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438257 ; 438593 ; 438594 ; 257316 ; 257318 ; 257321 ;
Abstract

A nonvolatile memory device includes a floating-gate electrode (14) overlying a surface (24) of a substrate (10). A diffusion barrier layer (34) extends from the substrate surface (24) along a wall surface (30) of the floating-gate electrode (14) to an upper surface (32) of the floating-gate electrode (14) and overlies the upper surface (32). The diffusion barrier layer (34) blocks the silicidation of the floating-gate electrode (14) and prevents ionic contaminants from diffusing to the floating-gate electrode (14). A charge control region (42) of the floating-gate electrode (14) is capacitively coupled to a well region (40) within the substrate (10). The well region (40) functions as a diffused control-gate electrode and regulates the voltage of the floating-gate electrode (14).


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