The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2000
Filed:
Aug. 05, 1997
Chan-Jo Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A static RAM which is a CMOS static RAM having first and second load transistors, first and second driver transistors, and first and second switching transistors in one memory cell includes: a laminated structure of a first polysilicon layer, a silicide layer and a second polysilicon layer, forming the gate regions of the second load and driver transistors in a body; an interconnection layer comprising a laminated structure of the silicide layer and the second polysilicon layer to form a p-n junction between the drain regions of the first load and driver transistors; and one contact for making the gate regions and the interconnection layer in a body by the second polysilicon layer.