The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2000
Filed:
Apr. 05, 1995
Mitsuyoshi Nakamura, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor memory device and a manufacturing method thereof are disclosed in which a reduction of the number of steps is made possible between the step of writing into ROM and the completion of the semiconductor memory device. In this semiconductor memory device, a high resistance polycrystalline silicon wiring region is provided at a portion of a source wiring connected to a source region of an MOS transistor. Accordingly, the MOS transistor can be turned OFF easily when a voltage of 3 V to 5 V is applied to that MOS transistor, without having to control its threshold voltage. In addition, if the manufacturing process for forming the high resistance wiring region in the source region is performed after the formation of a contact hole for an aluminum wiring for drains, the number of process steps is reduced between the step of writing into the ROM and completing the semiconductor memory device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile