The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2000
Filed:
Aug. 26, 1998
Joong-il An, Kyungki-do, KR;
Kyung-su Kim, Kyungki-do, KR;
Jung-su Lim, Kyungki-do, KR;
Jung-ki Kim, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method for stripping a film from a wafer substrate includes the steps of inserting a boat holding the wafer into a processing chamber of a CVD apparatus, and injecting gas into the chamber, to thereby strip the wafer of its film. A typical film requiring stripping is a polysilicon film grown on an underlying oxide layer of the substrate. In this case, CIF.sub.3 is used to strip the polysilicon film without damaging the oxide layer. Accordingly, this method is applicable to the quality testing of semiconductor wafer films using a test wafer. In such quality testing a film is formed on a test wafer substrate at the same time the semiconductor wafer film is formed. The film of the test wafer is tested to evaluate the quality of the formation of the semiconductor wafer film. The test wafer can then be stripped within the chemical vapor deposition apparatus and thus can be reused soon thereafter.