The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2000
Filed:
Feb. 10, 1997
Ognjen Milic-Strkalj, Burlingame, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of making a semiconductor device forms a gate on a substrate and provides a self-aligned diffusion source on the substrate, without the use of a mask. The diffusion source provides dopant material into the substrate. The self-aligning of the diffusion source avoids misalignment of the mask and improper doping. When the diffusion source is polysilicon or amorphous silicon, subsequent patterning and siliciding of the polysilicon forms silicided interconnect straps available for interconnecting devices on the semiconductor wafer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile