The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2000

Filed:

Apr. 03, 1998
Applicant:
Inventors:

Anders Soderbarg, Uppsala, SE;

Nils Ola Ogren, Vallingby, SE;

Hang.kan Sjodin, Knivsta, SE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257580 ; 257577 ; 257581 ; 257582 ;
Abstract

In order to avoid thermal runaway bipolar transistors, emitters are provided with ballast resistors. Elongate ballast resistors may be used, part of the lengths being connected for obtaining suitable resistance and design variability. The emitters are split up into a plurality of emitter portions, each with a separate emitter ballast resistor. The collector and base are correspondingly split up. The transistor is split up into unit cells, each comprising an emitter, a ballast resistor, a base, and a collector, which are respectively connected via respective common leads. This structure may advantageously be realized in a SOI technique, the galvanic isolation enabling unproblematic mixing of digital and analog and power devices in the same chip.


Find Patent Forward Citations

Soderbarg, Anders. (2000). Bipolar transistor structure (U.S. Patent No. 6013942). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6013942

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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