The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2000

Filed:

Jan. 22, 1998
Applicant:
Inventor:

Jin-Shown Shie, Hsinchu, TW;

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257469 ; 257531 ; 257532 ; 257533 ; 257536 ; 257419 ; 257467 ;
Abstract

This invention relates to a high-transimpedance solid-state switch manufactured by micromachining technology. A thermopile is formed by a thin-film structure capable of producing sufficient thermoelectrical voltage to drive a MOS transistor on and off, functioning like a switch. The driving thermoelectric voltage is generated by Joule's heat released by a thin-film heater disposed nearby a thermopile hot junction to generate a substantial temperature difference related to its cold junction. These elements can be monolithically integrated, wherein the heater and hot junctions are disposed on a thermal pad formed by micromachining having high thermal isolation. This invention has the following advantages: 1) the input and output ends are thermally coupled, thus are electrically isolated (very high transimpedance), therefore a small input power is able to control the MOS device having high output voltage and power; 2) the solid-state switch is a micromachined monolithic structure which is batch-producible, rather than the single-unit production for traditional mechanical switch; 3) when the present switch is ON/OFF, it is unnecessary to employ the charge leakage circuit essential for the current 'photoelectric-coupling MOS solid state switch', therefore the chip area is reducible; 4) the input of the switch for driving the heater can be designed to be high or low, AC or DC voltage, according to the necessity; 5) package of this invention may utilize the standard 'dual-in-line' structure, which is simpler and less costly compared with the photo-coupled switch whose package is 3-dimensional.


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