The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2000
Filed:
Jan. 28, 1998
Naohiko Kimizuka, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Tetsuya Muraoka, Tokyo, JP;
Abstract
To prevent channelling of gate impurities into channel region or gate insulation film without restricting sidewall material of the gate electrodes, a fabrication method of the invention of semiconductor devices comprises a first ion injection step for making amorphous a surface region (11) of a poly-silicon layer (7) for a gate electrode configured on a semiconductor substrate (1) by injecting ions selectively into the surface region, and a second ion injection step, performed after the first ion injection step without inserting any process needing a high temperature of the semiconductor substrate, for injecting impurities into the gate electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile