The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2000
Filed:
Jul. 03, 1996
Applicant:
Inventor:
Hitoshi Itoh, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, , JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438641 ; 438674 ; 438675 ;
Abstract
The present invention provides a method of selectively depositing a metal film in an opening of an insulating layer formed on a semiconductor substrate, the opening exposing a surface of at least one of a metal layer, a semiconductor layer, and a semiconductor substrate, the method including the steps of exposing a surface of insulating layer and the substrate surface to a gas plasma which consists of at least one of an inert gas and hydrogen, exposing the insulating layer to a gas containing halogen atoms other than fluorine atoms, and selectively depositing a metal film in the opening of the insulating layer.