The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2000
Filed:
Oct. 30, 1997
Applicant:
Inventors:
Assignee:
Hyundai Electronics Industries Co., Ltd., Kyoungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438452 ; 438444 ; 438439 ; 438445 ;
Abstract
A method for forming a field oxide film of a highly integrated semiconductor device, in which an annealing step is carried out during a field oxide film formation step for growing the field oxide film adapted to isolate elements of the semiconductor device. By the annealing step, it is possible to prevent a stress concentration phenomenon from occurring in a semiconductor substrate on which the field oxide film is formed, thereby reducing or eliminating a field oxide thinning phenomenon.