The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2000

Filed:

Sep. 05, 1997
Applicant:
Inventors:

Gregg Sumio Higashi, Orlando, FL (US);

Mon-Fen Hong, Sebring, FL (US);

Lionel Cooper Kimerling, Concord, MA (US);

Yi Ma, Orlando, FL (US);

Assignee:

Lucent Technologies Inc., Murray Hill, NJ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438402 ; 438471 ;
Abstract

Crochralski wafers are desirably thermally processed at an elevated temperature prior to integrated circuit fabrication. The thermal processing reduces the number of oxygen nucleation centers and prevents subsequent oxygen precipitation from interfering with iron contamination measurements.


Find Patent Forward Citations

Higashi, Gregg. (2000). Method of integrated circuit fabrication (U.S. Patent No. 6013556). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6013556

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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