The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2000
Filed:
Sep. 24, 1997
Applicant:
Inventors:
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B / ;
U.S. Cl.
CPC ...
427 96 ; 427108 ; 427109 ; 4271262 ;
Abstract
A thin film semiconductor device including an insulating substrate; and a structure provided on the insulating substrate and including a silicon layer containing hydrogen diffused therein and a silicon nitride layer. The insulating substrate is formed of an insulating material having a thermal expansion coefficient of 2.6.times.10.sup.-6 deg.sup.-1 or more or having a distortion point of 850.degree. C. or lower.