The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2000
Filed:
Nov. 05, 1998
Hiroshi Nomura, Kawasaki, JP;
Takashi Sato, Fujisawa, JP;
Takuya Kono, Urawa, JP;
Junichiro Iba, Mohigan Lake, NY (US);
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
The method of measuring the aberration of the projection optics, according to the present invention includes the following steps. In the first step, the first mask pattern including the first pattern in which a line and space pattern is arranged on a photomask to be linearly symmetrical, and the second pattern in which line patterns having a large line width are arranged on outer sides of the first pattern, to be linearly symmetrical, is transferred on a substrate. In the second step, the second mask pattern in which a patter designed to leave a part of the first pattern and a pattern designed to leave the entire second pattern are arranged to be linearly symmetrical, is transferred on the same substrate, so as to superimpose it on the transferred first pattern. In the third step, the position of the transferred pattern of the second pattern, and the predetermined position of the pattern section of the transferred pattern of the first pattern, which is left in the second step are detected. Thus, from the difference between these positions detected in the third step, the aberration of the projecting optics which is situated between the mask pattern of the photomask and the substrate is measured.