The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2000
Filed:
Jun. 13, 1997
Ryuichi Okamura, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a silicon substrate, a first insulating film, a barrier film, a contact hole, a protective film, a barrier metal, and an interconnection metal. A semiconductor element is formed on the silicon substrate. The first insulating film is formed on the silicon substrate. The barrier film is formed on the first insulating film to prevent moisture from externally entering. The contact hole is formed through the barrier film and the insulating film to a depth at which the silicon substrate is exposed. The protective film is formed on the side surface of the contact hole to protect the first insulating film against etching which is performed to remove a spontaneous oxide film formed on a surface of the silicon substrate which is exposed on a bottom surface of the contact hole. The barrier metal is continuously formed on at least the side and bottom surfaces of the contact hole and serves as a buffer conductor. The interconnection metal is buried in the contact hole on which the barrier metal is formed. A semiconductor device manufacturing method is also disclosed.