The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2000
Filed:
Oct. 19, 1992
Steven Lee, Colorado Springs, CO (US);
Gayle Miller, Colorado Springs, CO (US);
Hyundai Electronics America, Milpitas, CA (US);
NCR Corporation, Milpitas, CA (US);
Abstract
A monolithic semiconductor device includes a field effect transistor and a bipolar junction transistor with a pillar emitter structure. The pillar structure raises the BJT emitter above the surface of a trenched base. Ions implanted into the base trench diffuses into an extrinsic base contact region. The pillar elevation structure increases travel distance between the trench and the emitter and protects against encroachment without increasing the total emitter area allocated to the BJT device. A spacer oxide adjacent to the pillar separates the pillar from the trench-region implanted with ions.