The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2000
Filed:
Sep. 05, 1995
Applicant:
Inventors:
Nasser H Karam, Lexington, MA (US);
Steven J Wojtczuk, Waltham, MA (US);
Assignee:
Spire Corporation, Bedford, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438363 ; 438413 ; 438495 ;
Abstract
A heteroepitaxial semiconductor device having reduced density of threading dislocations and a process for forming such a device. According to one embodiment, the device includes a substrate which is heat treated to a temperature in excess of 1000.degree. C., a film of arsenic formed on the substrate at a temperature between 800.degree. C. and 840.degree. C., a GaAs nucleation layer of less than 200 angstroms and formed at a temperature between about 350.degree. C. and 450.degree. C., and a plurality of stacked groups of layers of InP, wherein adjacent InP layers are formed at different temperatures.
Published as:
WO9709738A1; US6010937A;