The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 1999
Filed:
Feb. 23, 1998
Yoshikazu Ibara, Gifu, JP;
Yasunori Inoue, Gifu, JP;
Sanyo Electric Co., Ltd., Moriguchi, JP;
Abstract
A semiconductor device suitable for increasing operation speed and microminiaturization is provided. First and second impurity diffusion regions are formed sandwiching an element isolation insulation film. After a metal film is deposited all over a substrate, a heat treatment for silicidization is applied to form a metal silicide layer on the first and second impurity diffusion regions. The metal film not silicided is removed by etching with a predetermined region of the metal film on the two metal silicide layers and on the element isolation insulation film covered with a mask. The metal silicide layers on the first and second impurity diffusion regions are electrically connected by a metal interconnection layer that is not silicided and that extends on and in direct contact with the element isolation insulation film.