The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 1999
Filed:
Dec. 11, 1997
Applicant:
Inventors:
Assignee:
Electronics and Telecommunications Research Institute, Daejon-Shi, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438303 ; 438301 ;
Abstract
The present invention relates to a MOS transistor of semiconductor device and method of manufacturing the same and, in particular, to MOS a transistor of semiconductor device and method of manufacturing the same which can reduce asymmetry of drain current due to bias of drain current, facilitate shallow junction and reduce the area to a minimum by forming a source/drain.