The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 1999
Filed:
Aug. 20, 1996
Shuzo Fujimura, Kawasaki, JP;
Jun Kikuchi, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
The present invention relates to a hydrogen plasma down-flow processing method and a hydrogen plasma down-flow processing apparatus and has an object to provide a hydrogen plasma down-flow processing method and a hydrogen plasma down-flow processing apparatus ensuring that it is possible to make it difficult for hydrogen atoms to deposit and recombine on the internal wall of the apparatus. High speed hydrogen plasma processing can be realized by improving transfer efficiency of hydrogen atoms to the processing chamber. Moreover hydrogen plasma efficiency can also be improved by reducing influence of oxidation species such as OH radical and oxygen atom concentrations can be controlled as desired by keeping the change in hydrogen atom concentration small. The apparatus includes a vacuum chamber of which at least a part of the structural members exposed to a vacuum is made by silicon oxide. In a hydrogen plasma down-flow processing method, whereby the processed object is processed in the down-flow area, the plasma is generated from the gas including at least hydrogen. A processing object is processed by heating at least a part of the silicon oxide region to 443.degree. C. or higher.