The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 1999
Filed:
Feb. 05, 1998
Feng-Ju Chuang, Hsinchu, TW;
Opto Tech Corporation, Hsinchu, TW;
Abstract
The structure of the sensing element of a platinum resistance thermometer and method for manufacturing the same, in which the silicon wafer is used as a substrate. A silicon substrate is etched to form a desired wiring pattern, then a silicon dioxide layer is grown as a layer of thermal oxide on the silicon substrate by heating the etched substrate in an oxygen-containing atmosphere. After a platinum film is deposited onto the surface of the silicon dioxide layer, the platinum-coated substrate is subject to gentle polishing. The platinum membrane outside the etched groove is easily detached while the platinum layer inside the etched groove remains attached. Thus a platinum circuit with a desired circuit pattern is formed on the substrate. After heat treatment in a temperature range of 750.degree. C..about. 1500.degree. C. and further processing, the sensing element of a platinum resistance thermometer is obtained. The platinum circuit thus formed is submerged in an groove and has a substantially bulk structure.