The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 1999
Filed:
Jun. 15, 1998
Applicant:
Inventor:
Nobuhiro Tanabe, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ;
U.S. Cl.
CPC ...
365145 ; 365149 ;
Abstract
In a ferroelectric memory, a malfunction in which data are reversed at the time of writing after reading out of data is prevented. Using a transistor to short-circuit two common lines which are connected to a memory element, the two common lines are short-circuited at the preparing stage for writing new data, and thereby such a malfunction which occurs reversal of data owing to an electric potential difference between common lines is prevented.
Tanabe, Nobuhiro. (1999). Ferroelectric memory and writing method of therein (U.S. Patent No. 6002608). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6002608
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile