The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 1999
Filed:
Feb. 26, 1999
Applicant:
Inventor:
Donald R Sauer, San Jose, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F / ;
U.S. Cl.
CPC ...
323315 ; 323313 ; 327539 ;
Abstract
A dual regeneration bandgap voltage generator circuit includes both CMOS and bipolar regeneration bandgap voltage generator circuits. Each of the regeneration bandgap voltage generator circuits is formed by cross-coupling current mirror circuits of opposite conductivity types. Upon initial application of power, the CMOS circuit becomes active first due to its higher leakage current. The 'on' current from the CMOS circuit is then used to initiate current conduction within the bipolar circuit. Once the bipolar circuit begins operating, it turns the CMOS circuit off.